Items Tagged with 'freescale'

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Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new laterally diffused metal oxide semiconductor (LDMOS) transistor targeting land mobile radio from Freescale Semiconductor Inc.

Maxim Integrated Inc. and Freescale Semiconductor® have collaborated to showcase a comprehensive LTE/3G picocell base station at the 2013 Mobile World Congress. This innovative small cell base station platform design is field deployable by mobile operators and also serves as a production-ready reference design to accelerate time to market for equipment manufacturers.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for new package options on an RF power LDMOS transistor from Freescale Semiconductor Inc. (Freescale).

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three new devices from Freescale Semiconductor Inc. (Freescale).

Freescale Semiconductor announced new two-stage, low-noise amplifiers (LNAs) that address two gain stages in one device and deliver coverage across multiple bands to simplify wireless base station designs.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale Semiconductor Inc. (Freescale).

RF power market leader Freescale Semiconductor has introduced new Airfast™ transistors engineered to boost the efficiency, peak power and signal bandwidth of next-generation base stations. With the new offerings, Freescale’s flagship Airfast RF power product line now includes at least one solution for each cellular band and supports both small and large cell base station deployments.

Freescale Semiconductor revealed its first RF power amplifier product built using gallium nitride (GaN) technology. The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.