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CPI Beverly Microwave Division’s Wide Range Of Integrated Microwave Assemblies includes: attenuators, integrated front ends, receivers, solid state coaxial limiters, solid state switches and more.

Integra Technologies offers GaN-on-SiC HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice.

RFMW Ltd. announces design and sales support for thin film, fixed attenuator pads from SemiGen, Inc. SemiGen offers a series of fixed attenuators from 1 to 30 dB in 1dB increments with flat frequency response from DC to 50 GHz.

Empower RF announced the release of model 2223, a single band solid state GaN system amplifier, capable of delivering a minimum 150 W across its entire .6 to 6 Ghz  band.

Vaunix Technology Corp. offers a Lab Brick LPS Series of RF and Microwave Programmable Digital Phase Shifters.

RFMW Ltd. announces design and sales support for an ultra-broad bandwidth, GaN, solid state power amplifier from Aethercomm. Model number SSPA 0.2-2.5-200 operates from 200 to 2500 MHz and delivers a typical, saturated output power of 200 W. 

Broad band miniature SMA couplers in 6, 10, 20 and 30 dB models covering 2.0 to 8.0 GHz, 50 W (3 kW peak), offering typical electrical performance of 0.4 dB insertion loss and VSWR of 1.20:1. 

MECA’s compact low pim (-170 dBc Typ) 10 W loads with extended frequency and power handling capabilities. Feature industry leading PIM verified at 1900 MHz (+40 dBm) at -160 dBc Min all while handling full rated power to 85C. 

IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems.

RFMW Ltd. introduced a high-performance, X-band, T/R module. The Qorvo QPM1002 incorporates a T/R switch, low noise amplifier and performs well in high temperature environments due to 0.25 um GaN-on-SiC fabrication.