Richardson RFPD, Inc., an Arrow Electronics company, announced the availability and full design support capabilities for a new reference design from NXP Semiconductors.
The A3G26D055N-100 is an orderable reference design for NXP’s A3G26D055NT4, a 100 to 2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 mm x 6.5 mm over-molded plastic package. It has an unmatched output allowing for wide frequency range utilization. The transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability.
Typical performance:
Frequency (MHz) |
Pout |
Gain |
IRL |
Drain Efficiency |
ID |
100 |
14.8 |
11.7 |
-2.5 |
85.7 |
0.540 |
1000 |
11.9 |
10.7 |
-7.9 |
64.4 |
0.580 |
2000 |
11.7 |
10.7 |
-5.2 |
54.8 |
0.670 |
2500 |
10.9 |
10.3 |
-4.9 |
52.9 |
0.640 |
VDD = 48 Vdc, IDQ = 45 mA (VGG = ~ -2.7 Vdc), Pin = 1 W, CW
The A3G26D055N-100 circuit optimizes the device from 100 to 2500 MHz, with 12 W CW and 11 dB gain by utilizing half of the device. The compact circuit (7 cm x 5 cm) is available for order from Richardson RFPD, and the circuit information is licensable from NXP.