STMicroelectronicsand Samsung Electronics Co., Ltd. have signed a comprehensive agreement on 28 nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.
The licensing accord provides customers with advanced manufacturing solutions from Samsung’s state-of-the-art 300 mm facilities and assures the industry of high-volume production for ST’s FD-SOI technology. FD-SOI technology at 28 nm delivers faster, cooler, and simpler semiconductor devices to meet the continuing demand for higher-performance, lower-power systems-on-chips for next-generation electronic products, such as mobile and consumer applications.
The agreement, on 28 nm FD-SOI technology, encompasses ST’s fully developed process technology and design enablement ecosystem. The company has already proven the speed-power and simplicity benefits of 28 nm FD-SOI and continues to build design interest and momentum
The agreement complements ST’s advanced 28 nm FD-SOI manufacturing capabilities at its 300 mm facility in Crolles, France, ensuring a multi-source option for 28 nm FD-SOI products and providing customers with the benefit of both Samsung’s and ST’s deep experience and comprehensive knowledge of high-volume manufacturing technology. The Samsung 28 nm FD-SOI process will be qualified in early 2015 for volume production.
“Building upon the existing solid relationship between ST and Samsung within the framework of the International Semiconductor Development Alliance, this agreement further strengthens our cooperation by extending it to 28 nm FD-SOI, while expanding the ecosystem and augmenting fab capacity for ST and the entire electronics industry. Moreover, the agreement confirms and strengthens further the business momentum that we have experienced on this technology during the past quarters through many customers and project engagements in our Embedded Processing Solutions segment,” said Jean-Marc Chery, Chief Operating Officer, STMicroelectronics. “We foresee further expansion of the 28 nm FD-SOI ecosystem, to include the leading EDA and IP suppliers, which will enrich the IP catalog available for 28nm FD-SOI.”
“We are pleased to announce this 28nm FD-SOI collaboration with ST. This is an ideal solution for customers looking for extra performance and power efficiency at the 28 nm node without having to migrate to 20nm,” said Dr. Seh-Woong Jeong, executive vice president of System LSI Business, Samsung Electronics. “28 nm process technology is a highly productive process technology and expected to have a long life span based on well-established manufacturing capabilities. By adding FD-SOI to our technology portfolio, Samsung provides a full-spectrum of 28 nm process offerings for our customers’ success.”