RFMW Ltd. announces design and sales support fora discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2080 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2080 provides 29.5dBm P1dB with 11.5dB associated gain and power added efficiency (PAE) of 56%. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required. The TGF2080 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
|
Part |
12 GHz |
DC |
Gate |
Die Size |
||||||||
|
Vds = 8V, Ids = 50% Idss |
Vds = 2V |
|||||||||||
|
P1dB |
G1dB |
PAE |
NF |
Idss |
Gm |
Vp |
BVgd |
BVgs |
Rth |
|||
|
22 |
14 |
55 |
1 |
58 |
70 |
-1.0 |
-15 |
-15 |
88 |
0.25x180 |
410x340 |
|
|
24 |
14 |
58 |
0.9 |
81 |
97 |
-1.0 |
-15 |
-15 |
62.5 |
0.25x250 |
410x340 |
|
|
26 |
13 |
55 |
1.1 |
129 |
155 |
-1.0 |
-15 |
-15 |
60 |
0.25x400 |
410x340 |
|
|
28 |
12 |
55 |
1.4 |
194 |
232 |
-1.0 |
-15 |
-15 |
54 |
0.25x600 |
410x340 |
|
|
30 |
11.5 |
60 |
– |
259 |
310 |
-1.0 |
-15 |
-15 |
45 |
0.25x800 |
410x540 |
|
|
TGF2120 * |
32 |
11 |
60 |
– |
388 |
464 |
-1.0 |
-15 |
-15 |
38 |
0.25x1200 |
410x540 |
|
TGF2160 * |
33 |
10.5 |
63 |
– |
517 |
619 |
-1.0 |
-15 |
-15 |
32 |
0.25x1600 |
410x540 |
*Coming Soon
