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Items Tagged with 'nitronex'

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MACOM acquires Nitronex LLC

M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance analog, RF, microwave and millimeter wave products, announced that it has acquired Nitronex LLC, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions. The acquisition of Nitronex is expected to provide MACOM with fundamental and innovative GaN-on-Silicon epitaxial and pendeoepitaxial semiconductor process technology and materials for use in RF applications.


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Agilent simulation & modeling software selected by Nitronex for high-power GaN design

Agilent Technologies Inc. announced that Nitronex, a GaAs labs company and leading producer of GaN-on-silicon RF power devices, has selected Agilent to provide a complete GaN design flow that spans both device modeling and circuit simulation. The flow uses Agilent EEsof EDA’s IC-CAP model extraction software and Advanced Design System (ADS) circuit and system simulator—both market-leading platforms in RF and microwave design.


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Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.


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Richardson RFPD introduces 28 V GaN-on-Si RF PA from Nitronex

Richardson RFPD Inc. announces availability and full design support capabilities for a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex.


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Nitronex qualifies rugged NPT1015 transistor

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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Richardson RFPD introduces evaluation kit for industry's smallest 5 W GaN MMIC PA

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new evaluation kit for a 5W GaN MMIC power amplifier from Nitronex.


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Nitronex welcomes new VP of engineering

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new vice president of engineering. Runton has almost 20 years of RF power semiconductor experience with six years in GaN specific product development, including design, assembly, qualification and packaging.


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Gaas Labs acquires Nitronex Corp.

Gaas Labs LLC, a private investment fund targeting the communications semiconductor market led by industry veteran John Ocampo, announced that it has acquired privately-held Nitronex Corp., an innovative leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets.


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Nitronex awarded Phase I SBIR from NASA

Nitronex has been awarded a Phase I SBIR to develop a highly efficient 20W X-band GaN power amplifier MMIC for use in long range RF telecommunications. Since 2005, Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs, and process technologies, as well as manufacturing maturation.


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Nitronex XPT1015 provides rugged, robust, and reliable RF power amplifier solution

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has developed a rugged transistor technology capable of surviving the industry’s most severe robustness tests without significant device degradation.


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