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ARTICLES

Nitronex qualifies rugged NPT1015 transistor

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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Nitronex welcomes new VP of engineering

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new vice president of engineering. Runton has almost 20 years of RF power semiconductor experience with six years in GaN specific product development, including design, assembly, qualification and packaging.


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Nitronex awarded Phase I SBIR from NASA

Nitronex has been awarded a Phase I SBIR to develop a highly efficient 20W X-band GaN power amplifier MMIC for use in long range RF telecommunications. Since 2005, Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs, and process technologies, as well as manufacturing maturation.


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Nitronex XPT1015 provides rugged, robust, and reliable RF power amplifier solution

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has developed a rugged transistor technology capable of surviving the industry’s most severe robustness tests without significant device degradation.


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New 48 V Technology from Nitronex Enables Cooler, More Reliable RF Power Products

Nitronex , a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial and scientific markets, has developed a 48 V GaN-on-Si process platform. Designated NRF2, this new platform delivers double the power density,...
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Nitronex Qualifies NRF1 GaN Process at GCS

Nitronex , a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has successfully completed qualification of its NRF1 discrete process for volume production at Global Communication Semiconductors (GCS). Under...
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NPA1004 Delivers Smallest Wideband 50 W Military Communications PA Solution

Nitronex , a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial and scientific markets, has developed the NPA1004, a 1 to 2 GHz, 50 W high gain PA for the military communications...
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Nitronex Releases GaN MMIC Process Design Kit

Nitronex , a leader in the design and manufacture of gallium nitride (GaN)-based RF solutions for high performance applications in the defense, communications and industrial & scientific markets, announces the release of the NRF1 MMIC Process Design Kit (PDK) for Agilent’s Advanced Design System (ADS). Nitronex’s high-performance 0.5 micron...
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Nitronex and Modelithics Release Nonlinear GaN Device Model

Nitronex and Modelithics have released the first state-of-the-art nonlinear model for Nitronex’s high power gallium nitride (GaN) NPT1012 device. The model combines heating effects, static and dynamic bias characteristics with large-signal performance to deliver accuracy unlike other GaN HEMT device models. The collaborative model predicts performance of the NPT1012...
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Nitronex Launches 200 W GaN HEMT Power Transistor

Nitronex , a leader in gallium nitride RF power transistors, has released the NPT1007 for applications up to 1.2 GHz. The NPT1007 comprises two power transistors, 100 W each, in an industry standard four lead Gemini package. This small footprint allows easy combining of both transistors into a compact...
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