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Articles by Cree Inc.

50 V Telecom GaN Transistors

May 14, 2013

Cree and Eta Devices to demo the world’s most efficient PA (70%+) for mobile base stations at the MWC 2013

February 20, 2013

Cree Inc. and Eta Devices Inc. will demonstrate the world’s most efficient reported power amplifier for mobile base stations at the 2013 Mobile World Congress, February 24-28 in Barcelona, Spain.


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Cree releases 50 V GaN HEMT technology to reduce cellular energy needs

November 5, 2012

Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.


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Cree and Array Wireless provide HD broadcast equipment for NBC's Sunday Night Football

October 19, 2012

Cree Inc. and Array Wireless help bring the clarity of high-definition (HD) video transmission to Sunday Night Football (SNF) on NBC. The HD NFL games are broadcast using wireless video systems from Array Wireless that employ Cree’s advanced GaN RF components. Array Wireless counts on Cree world-class RF GaN technology to create high efficiency, low distortion, robust power amplifiers that are essential for high-definition video transmission.


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50 and 100 W, X-Band Fully Matched Transistors

August 14, 2012

Introduction to a 50 and 100 W, X-Band GaN transistor family for high power applications


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Cree to provide information on new high power GaN IM FETs at X-Band while exhibiting at IMS 2012

May 31, 2012

Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.


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Cree's New Silicon Carbide Schottky Diodes Improve Energy Efficiency

October 7, 2011
Cree Inc. , a market leader in silicon carbide (SiC) power devices, continues its mission of advancing the adoption of SiC into mainstream power applications. Cree's advances in SiC technology are setting new standards in energy efficiency while reducing system costs and improving reliability when compared to silicon-based power...
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Cree To Demonstrate C-Band GaN HEMT MMIC High Power Amplifier for Satellite Communications

June 2, 2011
Cree Inc. (Booth 1925) will demonstrate the industry's first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at IMS 2011 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers. "This is the first GaN MMIC...
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Cree Launches 1200 V SiC Schottky Diode

February 24, 2011
Cree Inc. announced the availability of a commercial 1200 V surface-mount SiC Schottky diode. Packaged in an industry-standard surface-mount TO-252 D-Pak, the Schottky diodes deliver the same proven performance as Cree's TO-220 through-hole devices, with a smaller board footprint and lower profile. This can enable the design of smaller,...
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Cree Demonstrates 150-mm Silicon Carbide Substrates

September 2, 2010
Cree Inc. announced that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material....
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