Articles by RFMD
May 27, 2010
RF Micro Devices Inc. introduced the RF5608 WiFi RF front end module (FEM). RFMD’s feature-rich RF5608 FEM delivers superior integration and full final testing to reduce size, simplify development and lower overall cost in high-performance, dual-band applications such as mobile computing and access point WiFi applications. The dual-band RF5608...
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May 26, 2010
RF Micro Devices Inc. , a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced a new family of high linearity, 6-bit digitally controlled variable gain amplifiers (DVGA). The innovative RFDA family of DVGAs expands RFMD’s portfolio of infrastructure grade components that...
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May 26, 2010
RF Micro Devices Inc. (RFMD) announced the availability of the RF5633, a WiMAX 3.3 to 3.8 GHz power amplifier IC. The RF5633 is optimized for WiMAX systems, however it can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, wireless infrastructure, and WiFi-based wireless high...
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May 20, 2010
RF Micro Devices Inc. (RFMD) announced the availability of a new family of laminate-based VCOs for cellular infrastructure and other high performance wireless transceiver applications. The new RFVC975x product family leverages RFMD’s expertise in the design and manufacture of low phase noise discrete VCOs, as well as RFMD’s proprietary...
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May 17, 2010
RF Micro Devices Inc. (RFMD) announced the company has added high power Integrated Passive Component (IPC) technology to RFMD's foundry services portfolio and will begin providing IPC technology to customers of its Foundry Services business unit in June of this year. RFMD's IPC technology is complementary to its GaN...
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May 17, 2010
RF Micro Devices Inc. (RFMD) announced the successful qualification of the company's second high-power Gallium Nitride (GaN) process technology, expanding the company’s industry-leading portfolio of compound semiconductor technologies. RFMD’s second high-power GaN HEMT process technology (GaN2) achieves 1 to 2 dB higher gain and 6 dB greater linearity than...
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May 17, 2010
RF Micro Devices Inc. (RFMD) announced the company will showcase its broad portfolio of industry-leading RF communications components at the IEEE International Microwave Symposium (IMS), to be held May 25-27, 2010, in Anaheim, CA. During the conference, RFMD will host in-booth demonstrations of the company’s high-power gallium nitride (GaN)...
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May 13, 2010
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance RF components and compound semiconductor technologies, unveiled a highly integrated new front-end module (FEM) that delivers a complete integrated solution for handset/handheld WiFi 802.11b/g/n and Bluetooth® systems. RFMD's RF5755 FEM integrates a 2.5 GHz...
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May 5, 2010
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance RF components and compound semiconductor technologies, announced the industry’s first 1.2 GHz broadband transmission products, enabling enhanced, bandwidth-driven services for CATV operators and their subscribers. The new products provide options for cable operators to upgrade...
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April 8, 2010
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the introduction of the ML2730, a single-chip fully integrated Frequency Shift Keyed (FSK) transceiver with integrated power amplifier (PA) and low noise amplifier (LNA). The ML2730 expands...
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