Articles by RFMD

The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.

The RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3 G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability. The RFSW6131 is 3 V and 5 V positive logic compatible.

RFMD adds four new high linearity, low noise I/Q converters for 17 to 27 GHz applications. The two upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors. The two downconverters incorporate an image rejection mixer, LO buffer amplifier, and integrated LNA. Each device is packaged in a 5 x 5mm QFN to simplify both system-level board design and volume assembly.

RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation.

Four new MMIC Upconverter and Downconverter devices from RFMD offer high performance and low cost for high frequency applications. The RFUV1002 and RFUV1003 Upconverters incorporate an image rejection mixer, LO buffer amplifier, variable gain amplifier, and DC-decoupling capacitor. The RFRX1001 and RFRX1002 Downconverters incorporate an image rejection mixer, LO buffer amplifier, integrated LNA, and DC-decoupling capacitor. Each device is packaged in a 5 x 5 mm QFN to simplify both system-level board design and volume assembly.

RFMD’s new GaAs InGaP RFVC183x and RFVC184x series MMIC VCOs offer low phase noise and include integrated frequency dividers for Fo/2 and Fo/4 output frequency, as well as integrated RF output buffer amplifiers.

RFMD releases updates on their GaAs pHEMT up-converters. RFUV1002 is a 9 to 14 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier, a balanced single-side band (image rejection) mixer, followed by a variable gain amplifier and a DC decoupling capacitor. RFUV1003 is a 12 to 16 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier.

RFMD introduces their GaAs MMIC IQ downconverters RFRX1001 and RFRX1002. The RFRX1001 is a 10 to 15.4 GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors. The RFRX1002 is a 9 to 14GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors.

RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40 to 1008 MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations.