RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled multiple leading-edge GaN-based CATV amplifiers, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new CATV amplifiers include the RFPD2940 – a best-in-class, high-power GaN-based CATV power-doubler amplifier, as well as GaN-based push-pull CATV amplifiers, RFPP2870 and RFCM3080.
The RFFC207xA and RFFC507xA series of parts are reconfigurable frequency conversion devices with an integrated fractional-N phased locked loop (PLL) synthesizer, voltage controlled oscillator (VCO), and one or two high linearity mixers. The fractional-N synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products.
RFMD’s new RFHA104x series of high-power GaN broadband power transistors (BPTs) are optimized for military communications, commercial wireless infrastructure, and general purpose applications. These high-performance amplifiers achieve high power with high efficiency and flat gain over a broad frequency range in a single amplifier design.
RFMD's RFCA1008 is a high performance InGaP HBT MMIC amplifier designed with the InGaP process technology for excellent reliability. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. A Darlington configuration is utilized for broadband performance.
The parts in RFMD’s new RF73xx series of high-power, high-efficiency linear power amplifiers are designed for use as the final amplification stage in 3 V, 50 Ω LTE mobile cellular equipment developed for E-UTRAN/LTE band operation. These parts are developed for 5 to 20 MHz LTE channel bandwidths.
RFMD’s RFFM6901 is a single-chip front end module (FEM) for applications in the 868/915MHz ISM Band. The RFFM6901 addresses the need for aggressive size reduction for typical portable equipment RF front end design and greatly reduces the number of components outside of the core chipset, thus minimizing the footprint and assembly cost of the overall solution.
RFMD’s new high linearity WiFi front end modules provide complete integrated solution in a single front end module (FEM) for WiFi systems. The ultra-small form factor and integrated matching minimizes layout area in the application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturability costs.
The RFCM2680 is the industry's first surface mount GaN power doubler module aimed at CATV networks. Employing a combination of GaN HEMT and GaAs pHEMT technologies, the device provides high output capability from 45 to 1003 MHz with excellent distortion performance.
Richardson RFPD, Inc. today announces immediate availability and full design support capabilities of a new 400W SMT hybrid coupler and matching termination from Anaren. Part of the Xinger®-III line, the X3C06A4-03S is a low profile, high performance 400W, 3 dB hybrid coupler for two-way power combining/dividing.
The RFAM2790 is an integrated EDGE QAM amplifier module employing a GaAs pHEMT die, a GaAs MESFET die, a 20 dB range variable attenuator, and a power enable feature. It provides high output power, excellent linearity, and superior return loss performance with low noise and optimal reliability.