Murata Electronics North America, Inc., a wholly owned subsidiary of Murata Manufacturing Co., Ltd., and Peregrine Semiconductor Corp., founder of RF silicon on insulator (SOI) and pioneer of advanced RF solutions, announced that Murata has acquired all outstanding shares of Peregrine. The cash transaction paid the holders of Peregrine common shares $12.50 per share.
M/A-COM Technology Solutions Holdings Inc. ("MACOM"), a leading supplier of high performance RF, microwave, and millimeter wave products, announced two high power PIN diode switches with industry leading linearity in a common anode configuration, operating over 50 MHz to 1 GHz.
Modelithics, Inc., in partnership with TriQuint Semiconductor, has released the latest update to the growing library of high-accuracy non-linear simulation models for TriQuint gallium nitride (GaN) transistors.
RFMW, Ltd. announces design and sales support for TriQuint's TGA2598-SM, a 33dBm Psat GaN driver amplifier. The TGA2598-SM offers 25dB small signal gain from two internal gain stages housed in a 4x4mm, air-cavity ceramic QFN package.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.
RF Micro Devices, Inc. and TriQuint Semiconductor, Inc. announced the two companies have received all necessary shareholder and regulatory approvals to move forward with their previously announced merger of equals and have set Wednesday, December 31, 2014, as the anticipated closing date for the transaction.
ANADIGICS Inc., a world leader in radio frequency (RF) solutions, announced that the company is shipping production volumes of its AWL9281 front end integrated circuit (FEIC) to Huawei for the new Ascend Mate 7.
M/A-COM Technology Solutions Holdings, Inc., announced it has entered into a definitive agreement to acquire BinOptics Corp., a leading merchant provider of indium phosphide lasers for data centers, mobile backhaul, silicon photonics and access networks.
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announced its acceptance as a technical committee member on the Automotive Electronics Council (AEC). The AEC provides common part-qualification and quality-system standards for the automotive electronics industry.
Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.