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RFIC Channel

Skyworks introduces breakthrough low noise amplifiers at MTT-S 2013

Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a portfolio of low noise amplifiers (LNAs) that provide best-in-class noise figure, a critical component to boosting weak incoming signals for today’s 4G wireless infrastructure as well as diverse broad market systems including GPS, broadband, military and satellite communications.


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NXP achieves breakthrough noise figure performance with extreme broadband amplifiers

NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.


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Freescale's RF business makes long-term commitment to U.S.-based aerospace and defense market

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.


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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.


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Custom MMIC to debut several amplifiers and I/Q mixers at IMS 2013

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the debut of several new GaAs MMIC amplifiers and mixers in booth #1807 at the International Microwave Symposium in Seattle, WA June 4-6th.


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TriQuint's new power doublers offer high output CATV infrastructure performance

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, released its new gallium nitride (GaN) integrated power doubler with superior performance for fast-growing CATV infrastructure.


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Nitronex qualifies rugged NPT1015 transistor

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.


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Analog Devices unveils industry-leading broadband RF gain blocks

RFIC

Analog Devices Inc. (ADI) introduced four new RF amplifier gain blocks which ease the design of high dynamic range communications, defense and instrumentation systems.


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MACOM introduces broadband shunt family in ultra small plastic packages

M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, extended its strong industry position in diodes with a new family of broadband Shunt PIN diodes for high-power switching applications.


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TriQuint accelerates GaN offerings, releases significant new products and foundry services

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.


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