Pasternack Enterprises Inc. released a new portfolio of L and S-Band high gain amplifiers covering 1.2 to 1.4 GHz and 3.1 to 3.5 GHz specifically used for commercial and military radar applications. These RF amplifiers utilize a hybrid microwave integrated circuit design and advanced GaAs PHEMT technology to produce an unconditionally stable module.
The CHR3763is a multifunction monolithic receiver, which integrates a balanced cold FET mixer, an LO buffer, and an RF low noise amplifier. It is ideally-suited for Ku-band VSAT applications, as is also versatile for a wide range of other applications, from military to commercial communications systems.
Pasternack Enterprises Inc. announces the release of ten new 1 and 2 Watt broadband amplifiers, which are ideal for defense, EW/ECM, radar, test instrumentation, telecom, satcom, microwave radio and industrial applications from 2 GHz to 18 GHz.
RFMW Ltd. and Aviacomm Inc. announced a distribution agreement effective April 1, 2014. The agreement initially covers customers in North America, Europe and South East Asia with the possibility of future expansion. Aviacomm is a leader in wideband RF CMOS ICs. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.
Fox Electronics, a leading global supplier of frequency control solutions and an IDT company, now offers an LVDS version, in addition to the recently released LVPECL version of its next generation ultra precision oscillator technology, XpressO-ULTRA. Designed to meet today’s intense bandwidth requirements that need ultra precision timing technology, XpressO-ULTRA provides exceptionally clean and stable clocking to ensure better performance and lower bit rate errors.
Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.