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RFIC Channel

Qualcomm edges Broadcom to ABI Research's GNSS IC vendor competitive assessment

ABI Research’s GNSS IC vendor matrix concluded that, overall, Qualcomm is the leading GPS IC vendor, followed by Broadcom in second place, and CSR in third. The vendor matrix compares companies on 15 criteria across the broader categories of GNSS Innovation and Implementation. Qualcomm’s domination of cellular GPS IC shipments courtesy of its embedded platform strategy, coupled with its strong IZat and Gimbal platforms means it is well placed to remain at the top in 2013/14.


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Skyworks introduces linear PAs for LTE and WCDMA applications

Skyworks Solutions Inc. introduces four linear power amplifiers for LTE and WCDMA applications. The fully matched surface mount SKY66001-11 (2110 to 2170 MHz), SKY66002-11 (1900 to 2025 MHz), SKY66005-11 (850 to 920 MHz) and SKY66008-11 (900 to 990 MHz) modules meet the stringent spectral linearity requirements of femtocell applications with high power-added efficiency. An integrated directional coupler eliminates the need for any external coupler.


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AWR offers excerpt of Prof. Michael Steer’s latest microwave & RF design book

AWR Corp., the innovation leader in high-frequency EDA software, announces that for a limited time the company will offer a free eBook download of Chapter 18, “Wideband Amplifiers,” from the new second edition of engineering professor Michael Steer’s textbook, Microwave & RF Design: A Systems Approach. The eBook excerpt download also contains embedded video tutorials of Professor Steer demonstrating key principles of design as they pertain to the wideband amplifier case study contained within its pages.


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RFMD introduces world's first 6-Inch GaN-on-SiC wafers for RF power transistors

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.


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