Semiconductors / Integrated Circuits

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Ampleon announced the BLU9H0408L-800P 800 W RF power transistor. Using Ampleon’s latest Gen9 (50 V) LDMOS process technology, the BLU9H0408L-800P has been specifically designed for use in high power radar systems operating in the 400 MHz to 800 MHz UHF frequency band. 

IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.

NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.

Palomar Technologies announced the availability of their new Palomar 8100 Wire Bonder. The new 8100 wire bonder is a fully automated, thermosonic high speed ball-and-stitch wire bonder capable of ball bumping and customized looping profiles.