advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Industry News

Thales Alenia Space Wins Egyptian Satellite Contract

Thales Alenia Space has signed a contract with Nilesat, the Egyptian satellite company, to provide the Nilesat-201 broadcasting communication satellite and associated services and ground stations. As prime contractor, the company will be in charge of the design, manufacturing, test and in-orbit acceptance of the satellite. In addition, Thales...
Read More

Ciba and VTT Agree to Intelligent Collaboration

VTT Technical Research Centre of Finland and Ciba have signed a medium to long-term cooperation agreement in the field of printed intelligence. The agreement accelerates both companies’ current research collaboration in printed organic electronics, established in early 2007, and expands it to new printable functionalities in high-volume packaging and...
Read More

WiMAX Trial for Alcatel-Lucent in Thailand

Alcatel-Lucent has announced plans to conduct a trial of wireless broadband services using WiMAX Rev-e technology with True Corp., Thailand’s only fully integrated telecommunications provider and leader in convergence lifestyle. For the trial Alcatel-Lucent will provide True Corp. with a comprehensive WiMAX solution that operates on the 2.5 GHz...
Read More

IMS 2008 Daily News

Headlines for Friday, June 27 Cree Announces Sample Release of 90 W GaN HEMT Microphase Reveals New Designs for MoCA Applications Toshiba Expands GaN HEMT Product Family Peregrine Extends RF Performance to Test Equipment Applications Headlines for Thursday, June 26 LadyBug Announces Second Contract from US Government Agilent's MXG...
Read More

Cree Announces Sample Release of 90 W GaN HEMT

Cree Inc. announces the sample release of a 90 W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical radios and EMC applications. This transistor provides superior performance over wide bandwidths compared to other technologies such as GaAs MESFET or...
Read More

Toshiba Expands GaN HEMT Product Family

Toshiba America Electronic Components Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor high electron mobility transistors (HEMT) to its power amplifier product family. The first GaN HEMT for satellite communication applications from Toshiba, the Ku-band TGI1414-50L, operates in the 14 to 14.5 GHz range with...
Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement