Articles Tagged with ''power''

RFMW Ltd. announces Aviacomm distribution agreement

RFMW Ltd. and Aviacomm Inc. announced a distribution agreement effective April 1, 2014. The agreement initially covers customers in North America, Europe and South East Asia with the possibility of future expansion. Aviacomm is a leader in wideband RF CMOS ICs. RFMW Ltd. is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support.


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Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


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Pasternack introduces all new line of X-Band amplifiers

Pasternack Enterprises Inc., an industry leading manufacturer and supplier of RF, microwave and millimeter wave products, introduces a new family of coaxial X-Band high gain power amplifiers. These RF amplifiers are typically used as driver amplifiers or high power output amplifiers in a wide variety of commercial, industrial and military applications including telecom infrastructure, test instrumentation, fixed microwave backhaul, radar systems, communication systems, satellite communications and commercial avionics.


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RFMD awarded $9.7M Air Force contract to produce MM Wave GaN integrated circuits

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory (AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.


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RFMD wins CableFAX Tech Award for Green Technology

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that its Gallium Nitride (GaN) amplifier family for the new DOCSIS 3.1 CATV networking standard has won the CableFAX Tech Award for Green Technology. CableFAX's Green Technology Award recognizes technology that helps cable companies and program distributors cut energy consumption in equipment installed at the headend and/or in equipment distributed to residential and business customers.

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