Articles Tagged with ''micron''

Advanced Microcircuit Metallization Process

 

Metallization ServicesMetrigraphics announced it has developed an advanced process for applying metal layers to circuit substrates and to polyimide layers on multilayer circuits. The process works for both rigid and flexible circuits. Metallization layers can range in thickness from 10 microns to over 100 microns. Substrates can range up to 12" x 12" or 144 square inches.


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Low Capacitance PIN Diodes

SemiGen_PINdiodes_PR2SemiGen Inc., an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, offers PIN diodes that feature low capacitance and resistance, high reliability, and easy bonding with F.A.C. mesas. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures.


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RFMD awarded $9.7M Air Force contract to produce MM Wave GaN integrated circuits

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory (AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.


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e2v announces life extension program for Micron

e2v aerospace and defense Inc. (e2v a&d), a leader in RF power, imaging and hi-rel semiconductor solutions, announced a life extension program for selected memory devices of Micron Technology Inc. (Micron), one of the world’s leading providers of advanced memory solutions.


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Ohmega Technologies introduces OhmegaPly MTR thin film resistor material

Ohmega Technologies has introduced OhmegaPly® MTR™ Technology, which allows thin film resistors to be built within a printed circuit trace that is less than 100 microns (0.004”) wide. Using standard subtractive printed circuit board processes, it is ideal for high density interconnect (HDI) designs where passive component placement is difficult or impossible.


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