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Correlation between Ungated Recess Width and Linearity of GaAs MESFETs

Insight into a critical device parameter for optimum performance of high efficiency linear power amplifiers
Correlation between Ungated Recess Width and Linearity of GaAs MESFETs Intermodulation distortion and adjacent-channel power ratio (ACPR1) performance of GaAs MESFET discrete and MMIC power amplifier (PA) devices has been found to be dependent on the width of the ungated recess. Devices with wide ungated recess exhibit soft gain...
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