Integra Technologies offers GaN-on-SiC HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice.
Integra Technologies is now offering an IFF avionics transistor with 120 W peak output power using GaN/SiC technology. The IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation.
Integra Technologiesis pleased to announce the formal launch of ultra-efficient RF Power Modules developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.
IGT5259CW25 is a RF power transistor, ideal for C-band, CW applications. Fully matched to 50-ohms, operating at the instantaneous frequency range of 5.2 to 5.9 GHz, and offers a minimum of 25 W of output power at 36 V drain bias.
IGNP1214M1KW-GPS is a single-supply 50-Ohm matched GaN-based pulsed power pallet amplifier for L-Band radar systems, operating in the 1.20 to 1.40 GHz instantaneous frequency band. The pallet amplifier supplies a minimum of 1000 W of peak pulsed output power.
IGNP0912L1KW is a 50-Ohm matched GaN-based high power pulsed pallet amplifier for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 to 1.215 GHz. This pallet amplifier supplies a minimum of 1000W of peak pulse power.
The current trend in the growing S-band market demands wider bandwidths, higher power levels and wider pulses, which are best served with a new technology to satisfy these advanced requirements. AlGaN/GaN HEMT on silicon substrate technology is a viable alternative to traditional technologies for high power transistors used in...