Articles by Sonja R. Nedeljkovic, John R. McMacken, Paul J. Partyka and Joseph M. Gering, RFMD

A Custom III-V Heterojunction Bipolar Transistor Model

Communication systems today comprise the major use of GaAs technology with the highest volumes found in the cellular handset front-end. Here, heterojunction bipolar transistor (HBT) power amplifiers (PA) and Pseudomorphic High Electron Mobility Transistor (PHEMT) switches enjoy a comfortable market share. In this environment, the demands of production design...
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