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MITEQ’s AMFG family of GaN power amplifiers covers frequency ranges more than ten octaves wide. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power.
RFHIC recently released the new C-class GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon carbide substrate) devices.
MITEQ Inc. introduces Model AMFW-8F-17702130-150-P2-TC-WP, a very low noise, high dynamic range, temperature compensated, weatherproof Ka-band waveguide frontend operating at 17.7 to 21.3 GHz. Isolator protected at both the pressure sealed WR-42 waveguide input and K(F) connector output, the low-noise amplifier is lightweight with a small profile and footprint.
MITEQ Inc. introduces a new addition to its family of wideband high power amplifiers. The AMF-5B-07900840-35-40P is a connectorized X-band high power amplifier/module, covering 7.9 to 8.4 GHz and delivering over 10 W at P1 dB.
Mini-Circuits New Coaxial High Power Amplifier - 50Ω 3W 6 to 18 GHz. Features include high power, 3 W, high dynamic range, high gain of 35 dB typ. and good directivity of 35 dB typ. Internal voltage is regulated for 13 to 18 VDC.
Amplifier with super wide frequency and temperature range that is possibly the world’s most versatile amplifier has just been announced by AtlantecRF, the UK based microwave components and equipment manufacturer, in that it is capable of operating over a temperature range from -269C (4K) to +100C at frequencies from 1 to 20 GHz.
MITEQ Inc. introduces a new addition to its family of LNAs. The Model AFS4-00101200-18-10P-4 is ultra low noise, lightweight and has a small profile and footprint. The Kovar housing is a hermetically sealed package. This unit has an ultra low noise figure of 1.8 dB maximum.
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MITEQ’s AMFG family of GaN power amplifiers covers frequency ranges more than ten octaves wide. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power.%20GaN%20Hybrid%20Amplifier%20-%20200.webp?height=200&t=1327608370&width=200)
MITEQ Inc. introduces Model AMFW-8F-17702130-150-P2-TC-WP, a very low noise, high dynamic range, temperature compensated, weatherproof Ka-band waveguide frontend operating at 17.7 to 21.3 GHz. Isolator protected at both the pressure sealed WR-42 waveguide input and K(F) connector output, the low-noise amplifier is lightweight with a small profile and footprint.
MITEQ Inc. introduces a new addition to its family of wideband high power amplifiers. The AMF-5B-07900840-35-40P is a connectorized X-band high power amplifier/module, covering 7.9 to 8.4 GHz and delivering over 10 W at P1 dB.
Mini-Circuits New Coaxial High Power Amplifier - 50Ω 3W 6 to 18 GHz. Features include high power, 3 W, high dynamic range, high gain of 35 dB typ. and good directivity of 35 dB typ. Internal voltage is regulated for 13 to 18 VDC.
Amplifier with super wide frequency and temperature range that is possibly the world’s most versatile amplifier has just been announced by AtlantecRF, the UK based microwave components and equipment manufacturer, in that it is capable of operating over a temperature range from -269C (4K) to +100C at frequencies from 1 to 20 GHz.
MITEQ Inc. introduces a new addition to its family of LNAs. The Model AFS4-00101200-18-10P-4 is ultra low noise, lightweight and has a small profile and footprint. The Kovar housing is a hermetically sealed package. This unit has an ultra low noise figure of 1.8 dB maximum.