RFIC Channel

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Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the debut of several new GaAs MMIC amplifiers and mixers in booth #1807 at the International Microwave Symposium in Seattle, WA June 4-6th.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, released its new gallium nitride (GaN) integrated power doubler with superior performance for fast-growing CATV infrastructure.

Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC to 2.5 GHz, 50 W power transistor with 15 dB saturated gain and 65% peak drain efficiency at 2 GHz.

Analog Devices Inc. (ADI) introduced four new RF amplifier gain blocks which ease the design of high dynamic range communications, defense and instrumentation systems.

M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, extended its strong industry position in diodes with a new family of broadband Shunt PIN diodes for high-power switching applications.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.

Advantech Wireless Inc., a global wireless solutions provider, for satellite, RF equipment, microwave troposcatter and point-to-point systems, announced the release of the new Sapphire Series 2,500W Ku-Band UltraLinear™ GaN SSPA/BUC, modular design with built in redundancy.

MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.

Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), released four new DuNE™ Digitally Tunable Capacitors (DTCs), creating the industry’s broadest integrated RF tuning IC portfolio. The PE64906, PE64907, PE64908, and PE64909 DTCs feature a wide capacitance range of 0.6 – 7.7 pF and support power handling up to 34 dBm into 50 Ohms (30 Vpk RF).