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The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
BeSpoon, a fabless semiconductor company, and CEA-Leti have demonstrated an IR-UWB integrated circuit able to measure distances within a few centimeters’ accuracy, and have established a world-record operating range at 880 m (standard regulation) and 3,641 m (emergency situations).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new evaluation kit for a 5W GaN MMIC power amplifier from Nitronex.
API Technologies Corp., a provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, has expanded its power amplifier line of products to include the latest in GaN technology driven designs. This expanded line is specially intended for use in electronic warfare, RCIED countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical.
Infineon has in development a complete family of packaged RF Transceiver for Mobile Backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio.
TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.
RFMW Ltd. announces design and sales support for the RFPA2026, 700 to 2700MHz, 2W power amplifier module from RFMD. The RFPA2026 is a 3-stage module with independent bias control for each stage plus the ability to bypass the first stage to reduce gain and power consumption. With all stages active, the RFPA2026 provides 38dB of gain at 2140MHz with a corresponding P1dB of 33dBm.
Analog Devices Inc. (ADI), a world leader in high-performance semiconductors for signal processing applications and RF ICs, introduced a high performance RMS power detector. Featuring operation up to 10 GHz and a 67 dB measurement range, the ADL5906 TruPwr™ RMS detector is frequency versatile and eliminates the need for external input tuning devices, such as a balun.
RSS
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
Infineon has in development a complete family of packaged RF Transceiver for Mobile Backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio. 
RFMW Ltd. announces design and sales support for the RFPA2026, 700 to 2700MHz, 2W power amplifier module from RFMD. The RFPA2026 is a 3-stage module with independent bias control for each stage plus the ability to bypass the first stage to reduce gain and power consumption. With all stages active, the RFPA2026 provides 38dB of gain at 2140MHz with a corresponding P1dB of 33dBm.