We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry, announced that it has surpassed 1 million cumulative wafer shipments to customers in the mobile PA, Wi-Fi, wireless infrastructure and optical markets.
Modelithics Inc. and Qorvo announced plans to expand the popular Modelithics® Qorvo GaN library of high accuracy non-linear models for Qorvo transistors. The current GaN library version (v1.5) has 29 packaged and die transistor models. New plans include adding over 20 new Qorvo GaN transistor models.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Ariz., May 19-21. MACOM’s booth will feature new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier, to their standard product catalog.
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces two new UltraCMOS® RF switches that expand its existing portfolio of solutions for automotive applications
M/A-COM Technology Solutions Holdings Inc. (“MACOM”), a leading supplier of high performance RF, microwave, millimeterwave and photonic semiconductor products, announced a GaN bias controller and sequencer for fixed and pulsed negative gate biasing.
Skyworks introduces a highly integrated, 5 GHz 802.11ac/n front-end module for mobile platforms including smartphones and tablets. The fully matched SKY85716-11 FEM incorporates a 5 GHz single-pole, double-throw transmit/receive switch, a 5 GHz low noise amplifier with bypassand a 5 GHz power amplifier.
GaN Panel featuring experts from Freescale, MACOM, Qorvo and Empower RF
The panelists will discuss the attributes of GaN for RF applications including wireless, automotive, multimedia and communications, covering the semiconductors strengths and weaknesses for addressing specific applications compared to other existing technologies and its outlook for development and adoption in new application targeting higher frequency green-field initiatives.
Qorvo is adding new high-speed products for long haul, metro, and data center applications to deliver new multi-channel and low power consumption options that reduce cost, enable market leading channel to channel isolation while shrinking product form factor, and maximize integration and signal fidelity for network equipment manufacturers.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.
RSS
Modelithics Inc. and Qorvo announced plans to expand the popular Modelithics® Qorvo GaN library of high accuracy non-linear models for Qorvo transistors. The current GaN library version (v1.5) has 29 packaged and die transistor models. New plans include adding over 20 new Qorvo GaN transistor models. 
M/A-COM Technology Solutions Holdings Inc. (“MACOM”), a leading supplier of high performance RF, microwave, millimeterwave and photonic semiconductor products, announced a GaN bias controller and sequencer for fixed and pulsed negative gate biasing.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.