WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry, announced the release of its sixth generation Enhancement-Depletion mode GaAs Pseudomorphic HEMT technology for high performance RF and mmWave applications. This new platform, PE15, combines a 0.15μm E-mode transistor with ft >110 GHz, with monolithic PN diodes for compact ESD protection, and optional modules for low current E/D logic and RF switching. These design solutions are realized within an environmentally robust backend platform that is compatible with advanced integration techniques such as bump/flip chip assembly and isolated throughwafer RF connections. PE15 is a versatile technology that provides excellent gain/bandwidth, power and noise performance, and enables unique design solutions for diverse applications including Ka-Band, 5G infrastructure and 100G optical components.

WIN Semiconductors continues to invest in its market leading PHEMT technology portfolio and supports the entire industry with access to these advances embodied by the PE15 platform. This technology leverages WIN’s qualified production techniques and industry leading manufacturing scale, and represents a new platform that can be extended and optimized to address rapidly evolving market requirements.

WIN Semiconductors Corp will be showcasing its RF and mmWave solutions in booth 3851 at the 2015 IEEE International Microwave Symposium in Phoenix, Ariz. May 17-22.