RFIC Channel

Richardson RFPD introduces four new RF GaN on SiC HEMTs from TriQuint

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.


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RFMD earns Huawei's supplier of the year award

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has earned Huawei's Supplier of the Year Award at a ceremony held today at Huawei's headquarters in Shenzhen, China. The award recognizes RFMD as Huawei's best supplier of RF components, which are used in Huawei's mobile phones and infrastructure products. This is the second year in a row that RFMD has earned Huawei's Supplier of the Year Award.


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MACOM's 4-23 GHz low noise active mixer

 M/A-COM Technology Solutions Inc., a leading supplier of high performance RF, microwave, and millimeter wave products, today announced at EuMW 2014 inRome, Italy, its MAMX-011023 low noise active mixer is available for sampling immediately. The highly anticipated market arrival of the 4-23 GHz MAMX-011023 discrete mixer gives system designers unrivaled flexibility to target a wide range of applications with a single mixer component.  


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