M/A-COM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new NPA1006, a Gallium Nitride (GaN) wideband power amplifier optimized for 20-1000 MHz operation. This GaN on Silicon (Si) HEMT D-Mode Amplifier is suited for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure.
For more information on MACOM's expanding GaN portfolio and recently announced Gen4 GaN technology, please visit booth 2839 at the IMS 2015 tradeshow in Phoenix, Arizona, May 19th – May 21st.
The NPA1006 is designed for saturated and linear operation, featuring output levels up to 12.5W (41 dBm). The NPA1006 boasts 50 ohms input matched and output unmatched, 28 V operation and 14 dB gain. The device also provides customers with 65% drain efficiency at 900 MHz.
MACOM continues to shatter the barriers to mainstream GaN adoption by delivering superior technical performance products below LDMOS cost structures. MACOM offers the industry’s broadest portfolio, frequency range, power levels and packaging, crafting the industry’s only true dual-sourcing capability.
“The NPA1006 is a great addition to MACOM's expanding GaN portfolio,” said Gary Lopes, Senior Product Director, MACOM. “With our Gen 1 and Gen 2 products fully qualified and millions of units in the field, we are excited to continue leveraging our global design resources and deep GaN application experience to offer the industry the best performance, gain, efficiency and low cost products with our new Gen 4 technology.”
Production quantities and samples of the NPA1006 are available from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com.