Semiconductors / Integrated Circuits

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Nujira has secured a further £10 million of funding for its growth plans. The investment round, led by a new investor, Climate Change Capital Private Equity (CPE) and supported by existing investors Amadeus, NES Partners, Environmental Technologies Fund (ETF) and the angel investors, will reinforce the company’s vision to...

STMicroelectronics has announced a highly integrated device enabling wireless infrastructure equipment makers to meet the demand for more flexible and compact next-generation mobile network base stations. The low cost STW82100B series will also be used in equipment such as RF instrumentation and general wireless-infrastructure applications. Demand for broadband services...

Peregrine Semiconductor will launch a new product at IMS 2011. DuNE Digitally Tunable Capacitors (DTC) will be in the spotlight in Booth 1626. Peregrine’s PE64904 (SPI) and PE64905 (I2C) DTCs are solid-state, digitally controlled variable capacitors targeting 100 MHz to 3 GHz. These unprecedented UltraCMOS RFICs enable frequency agile...

TriQuint Semiconductor (Booth 2218) will highlight its new K-band power amplifier at IMS 2011. Operating from 21.2 to 23.6 GHz, TriQuint’s TGA4533-SM offers a packaged, 1W P1dB, K-Band power amplifier with 22dB small signal gain. The high OIP3 of 41dBm from this pHEMT device supports applications in PtP radio...

NXP Semiconductors N.V. will demonstrate a component for a complete, mixed signal, base transceiver station (BTS) radio at IMS 2011 from Booth 420. The NXP BTS transceiver component demonstrator fully supports the demanding requirements of leading-edge wireless air interface standards, such as LTE Advanced, and showcases NXP’s new and...

TriQuint Semiconductor and Agilent Technologies Inc. announced results for building next-generation RF solutions. This includes enhanced TriQuint process design kits with support for Agilent's Advanced Design System 2011 EDA software and the development of an ADS RF Module PDK for TriQuint's RFIC/MMIC and RF Module integrated design flow. The...

RFMD introduces the development of its GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 μm GaN high electron mobility transistor (HEMT) semiconductor process, these high performance amplifiers show excellent peak drain efficiency and flat gain over a broad frequency range...

Endwave Corp. will be showcasing several new products at IMS 2011 in Baltimore. Endwave has added a pair of integrated frequency upconverters to its line of high performance GaAs monolithic microwave integrated circuit (MMIC) products. The models EWU1509YF and EWU1809YF frequency upconverters operate over intermediate-frequency (IF) ranges of DC...

NXP Semiconductors has introduced an ultra high frequency (UHF) 600 W RF power transistor that is a LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the full UHF band from...