Articles Tagged with ''Ampleon''

Ampleon will showcase their latest solutions and innovative products in GaN and LDMOS technologies at the European Microwave Week. 

Ampleon introduces the B11G3338N80D push-pull three-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6 GHz frequency bands. 

Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 W CLF3H0060(S)-30, 100 W CLF3H0035(S)-100.

The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. 

The CLF3H0035-100U is a 100 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 3.5 GHz.

The CLF3H0060-30U is a 30 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz.

The ART35FE, LDMOS power transistor provides 35 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz

Ampleon's “ART (Advanced Rugged Technology)” white paper describes Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF power for 1 through 400 MHz applications.

Ampleon announced the BLC10G27XS-400AVT 400 W asymmetric Doherty RF power transistor, designed for use in base station multi-carrier applications operating in the 2.496 to 2.690 GHz frequency range.