At the International Microwave Symposium in Atlanta, HVVi Semiconductors will be demonstrating its new family RF transistors for avionics and pulsed radar applications. Based on the HVVFET™, a high frequency, high voltage vertical field effect transistor, these devices deliver frequency bandwidth, voltage, ruggedness and power levels not obtainable from current LDMOS and bipolar technologies.

HVVFET’s gain, efficiency and power density enable system designers eliminate amplification stages in power amplifiers (PA), reduce parts count and shrink PCB space requirements. The technology’s lower thermal resistance and higher ruggedness increase reliability and improve MTBF.

For more information, visit Booth 223.