Richardson RFPD, Inc., an Arrow Electronics company, announced the in-stock availability and full design support capabilities for a new GaN on SiC, RF power amplifier from United Monolithic Semiconductors.

The CHA8612-QDB is a two-stage high power amplifier operating between 7.9 and 11 GHz. It provides 18 W (typical) of saturated output power and 40 percent power-added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is versatile for a wide range of applications, from military to commercial radar and communication systems.

Additional key features of the CHA8612-QDB include:

  • Linear gain: 26 dB
  • DC bias: Vd=30 V at IDQ=680 mA
  • MSL 3
  • 46-lead, 7x7 mm QFN package