Items Tagged with 'GaN on SiC'

The CHA8612-QDB is a two-stage high power amplifier operating between 7.9 and 11 GHz. It provides 18 W (typical) of saturated output power and 40 percent power-added efficiency. 

SweGaN AB announced it has completed a Series A financing round totaling 125 MSEK (12 million Euro) and announced the appointment of Jr-Tai “Ted” Chen as CEO. 

WIN Semiconductors Corp has expanded its portfolio of RF GaN technologies with the release of a new GaN on SiC 0.12 μm-gate technology. 

The MB.406.0G363228 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 4 Watts of saturated power from 400 to 6000 MHz with a P1dB of 2 W.

Richardson RFPD, Inc. announced the availability and full design support capabilities for a lineup of X-Band GaN on SiC devices from Wolfspeed.