Ampleon announced the strength of its participation at Electronic Design Innovation Conference (EDI CON) China to be held in Shanghai, China on April 25 – 27, not only as an exhibitor but also in conference panel sessions and workshops.

At booth, 243, Ampleon will showcase its latest RF amplifier devices and modules suitable for use in mobile broadband, broadcast, industrial, radar and avionics, and RF energy applications. Product demonstrations include a 400 Watt S-Band pallet, a 900 W UHF broadcast design and a 2,000 W 127 MHz ISM band example. Also on show will be a 433 MHz, 200 W pallet with integrated sensing for use in RF energy applications.

Ampleon’s LDMOS product portfolio includes broadband devices, transistors for Doherty amplifiers, extremely rugged high power devices designed for industrustrial, scientific and medical applications, and transistors for civilian radars. The GaN on SiC line-up includes high power broadband devices and drivers.

In addition to a comprehensive line-up of their latest products and solutions, Ampleon staff are also actively participating in the conference programme. On Tuesday, April 25 at 1.50pm, Pinglu Chen, Managing Director, Ampleon Semiconductors (Hefei) Co. Ltd, China, will take part in the RF Energy Alliance panel workshop titled, Solid-State RF Energy in 2017: The Volume Breakthrough is Finally There, is it Not?

On Wednesday, April 26 at 1.45pm, Francis Auvray, Senior RF Engineer at Ampleon will chair a workshop on 20 W Fully Integrated 3.5 GHz GaN Doherty MMICs for 5G Applications. Also on Wednesday, April 26, Nick Pulsford, Senior Vice President R&D/Technology at Ampleon will participate in the panel regarding trends in mobile infrastructure at 1.45pm.

Also, staff from local distribution partners DXY Technology, Flyring Electronics and Transemic Technology will be co-exhibiting alongside Ampleon on the booth.

Conference registration is now open at