GaAs pHEMT based High Linearity Gain Block Amplifiers
The HMC636ST89E and HMC639ST89E are GaAs pHEMT based High Linearity Gain Block Amplifiers which require no external matching making them ideal as replacements for competitor products such as the AH-1 and the AM-1 gain blocks in IF and RF applications from 50 MHz to 4 GHz.
The HMC636ST89E High Linearity Gain block Amplifier is rated from 200 MHz to 4 GHz, and delivers 13 dB gain, +40 dBm output IP3, and noise figure as low as 2.2 dB. The HMC639ST89E High Linearity Gain block Amplifier is rated from 50 MHz to 3 GHz, and delivers 13 dB gain, +38 dBm output IP3, and noise figure as low as 2.7 dB.
These 50 Ohm cascadable amplifiers are packaged in industry standard RoHS compliant SOT89 packages, and will serve various IF and RF requirements in cellular/3G, WiMAX/4G, and software defined radio applications.
The HMC636ST89E and HMC639ST89E are powered directly from a +5V supply and consume 155 mA and 104 mA of current respectively. The internally matched topology permits these amplifiers to be readily ported between virtually any printed circuit board material, regardless of its dielectric constant, thickness or composition.
Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company’s e-commerce site or via direct purchase order. Released data sheets are available on-line at www.hittite.com.