- Buyers Guide
Nujira Ltd., the world’s leader in Envelope Tracking (ET) technology, has unveiled its newest Coolteq.L ET power supply modulator chip for LTE handsets. Nujira's NCT-L1300 delivers the best ET modulator performance on the market across all key metrics: system efficiency, noise, bandwidth, linearity and RF output power. The new chip is now being geared up for volume production to support 4G smartphone shipments in 2014.
United Monolithic Semiconductors (UMS) announced the frequency band of the CHA3801-QDG LNA has been increased from 1.25 to 1.75GHz to 1 to 2GHz.
Texas Instruments Inc. (TI) introduced a family of 12-bit, 500- to 900-MSPS analog-to-digital converters (ADCs) that reduce board space by 80 percent while providing industry-leading signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
Northrop Grumman Corp. has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-Band communication applications. This product represents the first commercial availability of a packaged, GaN-based component from the company.
SemiGen Inc. (www.semigen.net), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has announced that a series of microwave chip capacitors are now available from their RF Supply Center.
Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a portfolio of low noise amplifiers (LNAs) that provide best-in-class noise figure, a critical component to boosting weak incoming signals for today’s 4G wireless infrastructure as well as diverse broad market systems including GPS, broadband, military and satellite communications.
NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.
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