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RFMD expands GAN matched power transistor family

June 19, 2012

RF Micro Devices Inc.

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RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

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Items Tagged with '80-watt'
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RFMD expands GAN matched power transistor family

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In Print

Featured

Featured

Featured

The MWJ Buyer's Guide

Popular

Nice meeting you! - IMS Seattle 2013: Sunny Side-Up

- Less is More: The New Mobile RF Front-End

Eng. Manager - Technique to Minimize Phase Noise of Crystal Oscillators

CEO - Technique to Minimize Phase Noise of Crystal Oscillators

e.e - CMOS Gate Driver: IXRFD630

Multimedia

Image Galleries

Videos

What's the Frequency Kenneth?

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Items Tagged with '80-watt'
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