Military Microwaves Supplement
Modular Platform Approach for UWB Radar System Design
Cost-Effective Approach to Simulation for EW Systems
Co-existence Tests for S-Band Radar and LTE Networks
RF Micro Devices Inc. announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.
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