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In Print

May 2013 Digital Edition Online Edition

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From a Russian Source

Oscillator and synthesizer developments in Russia

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The Premier of EDI CON

A look at an emerging community and its unique technology needs in a recap of EDI CON 2013

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Efficiency Enhanced Amplifier Using a Digitally-Controlled Dynamic Bias Switching Circuit

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California receives first-ever white space broadband network

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MTT-S IMS 2013 Online Show Daily

Disposable wireless heathcare sensor market shows signs of life

Richardson RFPD Announces IMS 2013 Schedule

Better than photos - Northrop Grumman, U.S. Navy conduct arrested landing of X-47B unmanned demonstrator

- Northrop Grumman, U.S. Navy conduct arrested landing of X-47B unmanned demonstrator

TPR1000 - SiC High Power Transistors for Next Generation VHF/UHF Radar

- Wireless Trends to Look for at MWC 2013

LTE and WSN - Wireless Sensor Networks: Overcoming the Challenges to Reach $2 B in 2021

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ARTICLES

Cree to provide information on new high power GaN IM FETs at X-Band while exhibiting at IMS 2012

May 31, 2012
Cree Inc.
One Comment

Cree is gearing up for the 2012 International Microwave Symposium with plans to showcase the latest in GaN-on-SiC technology. Several IMS panel sessions will feature Cree speakers, who will discuss everything from the emerging RF market opportunities for GaN to cellular infrastructure future markets.


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