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ARTICLES

THERMAL DESIGN CONSIDERATIONS FOR WIDE BANDGAP TRANSISTORS

The effect the number of gate fingers, gate geometry and epitaxial layer thickness has on the peak junction temperature of high power gallium nitride and silicon carbide transistors
June 1, 2000
TECHNICAL FEATURE THERMAL DESIGN CONSIDERATIONS FOR WIDE BANDGAP TRANSISTORS Abstract: The peak junction temperature of a transistor is an important factor in determining its lifetime and output power degradation over time. Many design parameters determine the temperature rise in the semiconductor, including the transistor performance, semiconductor material and device...
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