- Buyers Guide
Infineon Technologies supports Samsung’s Galaxy S5 with a total of eight RF components, including LTE Low Noise Amplifiers (LNAs), Quad LNA banks, a GPS LNA and SPDT RF switches.
Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.
Infineon Technologies has introduced a new series of LTE low noise amplifiers and Quad LNA banks specially designed to enhance the data rate in smartphones.
Infineon has in development a complete family of packaged RF Transceiver for Mobile Backhaul – beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio.
Infineon Technologies has introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the BUY25CSXX family are claimed to offer best-in-class performance to support design of energy-efficient power conditioning and power supply systems for space use.
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