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Products

Front-End Module: SKY66115-11 FEM

SKY66115-11 Skyworks has introduced a highly integrated 470 to 510 MHz front-end module (FEM) that is ideal for smart energy, smart metering (electric, gas, water, heat), security, RFID, industrial and other Internet of Things (IoT) applications. The SKY66115-11 FEM operates over a wide variety of supply voltages at low power consumption, and comes in a small 4 x 4 x 0.9 mm, 16-pin multichip module solution. Its extended range more than doubles when compared to a standalone system-on-chip solution.


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Traditional NP0 Series Capacitors: 0505C Series / 1111C Series

LOW ESR CAPACITORSPPI is offering traditional NP0, Hi-Q 0505 (0.055” x 0.055”) and 1111 (0.110” x 0.110”) series capacitors with increased temperature and life test performance. They have been qualified to 200°C, under 2x WVCD, for 2000 hours. These parts exhibit low ESR/ESL, low noise, high power, high self-resonance, as well as ultra-stable performance over temperature. Typical applications are wireless broadcasting equipment, mobile base stations, GPS and more.


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200 W CW Power Transistor: CLF1G0035S-200P

CLF1G0035S-200PRFMW Ltd. announces design and sales support for a 200 W CW power transistor from Ampleon. The CLF1G0035S-200P GaN HEMT is usable from DC to 3.5GHz for broadband applications in wireless infrastructure, public mobile radios, jammers and Radar. The Ampleon CLF1G0035S-200P offers up to 11 dB of associated gain in CW applications or 14 dB of gain in pulsed applications. The transistor draws only 300 mA in class AB configurations with 44% typical efficiency.


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Two Monolithic Phase - Amplitude Controllers: PE46130 & PE46140

Peregrine_PE46130_PE46140_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two monolithic phase and amplitude controllers. The PE46130 and PE46140 are Peregrine's additions to its MPAC product family and offer maximum phase-tuning flexibility for Doherty PA optimization. These monolithic RFICs integrate a 90° RF splitter, digital phase shifters and a digital step attenuator along with a low-voltage CMOS serial interface. They cover a phase range of 87.2° in 2.8° steps.

 


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Directional Coupler: 120706

krytar 120706 directional couplerX-band directional coupler with 6 dB coupling (7.0 to 12.4 GHz), Model 120706, offers superior performance ratings and is designed for system applications where external leveling, precise monitoring, signal mixing, or swept transmission and reflection measurements are required. KRYTAR also offers complete engineering services for custom designs covering the ultra-wideband frequency range.


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Broadrange Distributed Amplifier: CMD233C4

CMD233C4_PRCustom MMIC has added an amplifier to its Broadrange Distributed AmplifierTM portfolio, the CMD233C4. The 2 to 18 GHz distributed amplifier is a packaged version of the CMD233 die product. The CMD233C4 is a wideband GaAs MMIC distributed amplifier with a low noise figure of 4.5 dB and output 1 dB compression point of +20.5 dBm. This amplifier delivers over 9 dB of gain and operates from a single 3 to 6 volt supply.


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Monolithic Amplifier: LVA-123+

DQ849LVA-123+ (RoHS compliant) is an advanced ultra-wideband amplifier fabricated using GaAs HBT technol­ogy and offers excellent gain flatness over a broad frequency range. In addition, the LVA-123+ has good input and output return loss over this frequency range without the need for external matching components. Lead finish is tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a 3 x 3 mm 8-lead package for very good thermal performance.


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Small Cell Duplexer: TQQ7101

TQQ7101RFMW Ltd. announces design and sales support for a small cell duplexer. The Qorvo TQQ7101 BAW technology offers high isolation for LTE Band 1 uplink (1950 MHz) and down link (2140 MHz) filter requirements in base stations, repeaters, signal boosters and small cells. With full 60 MHz bandwidth, in band insertion loss is only 3.7 dB while UL/DL attenuation is up to 44 dB. The TQQ7101 requires no external matching and handles 29 dBm of power.


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LDMOS Power Transistor: MRF1K50H

NXP_MRF1K50H_PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500 W CW at 50 V, along with superior ruggedness and thermal performance. The MRF1K50H can reduce the number of transistors in high-power RF amplifiers- decreasing amplifier size and BOM.


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GaN Power Amplifier: TGA2218-SM

TGA2218-SMRFMW Ltd. announces design and sales support for a GaN power amplifier. The Qorvo TGA2218-SM offers 12 W of saturated output power from 13.4 to 16.5 GHz. Small signal gain is >28 dB while large signal gain is >23 dB. The TGA2218-SM draws 225 mA from a 28 V supply with 29% power added efficiency (PAE). Serving Commercial VSAT, Military Satcom, Radar and Data Link applications, the TGA2218-SM comes in a 5.5 x4.5 mm, air-cavity QFN package.


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