RF & Microwave Industry News

The Smart Grid Communications Evolution: “Closing the Loop” for the Intelligent Electric Grid

A vast amount of activity is occurring on a global basis to upgrade electrical power grids to make the delivery of electricity more efficient, reliable, environmentally friendly and cost effective. This includes a wide variety of equipment and technology within the generation, transmission, distribution and metering portions of the...
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0.1 µm PHEMT Process for E-band Power Applications

To meet the ever-increasing demands of next generation wireless infrastructure, fiber optics and advanced military systems markets, WIN Semiconductors Corp. has developed an ultra-high performance 0.1 µm GaAs PHEMT technology. This device platform, named PP10, is produced on 150 mm GaAs wafers in WIN Semiconductor’s state-of-the-art wafer foundry located...
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ViaSat Demonstrates Mesh SATCOM COTM

ViaSat Inc. has successfully demonstrated full-mesh satellite communications at Ka-band between an Australian Army deployable 1.0 m Compact Transmit Receive Suite (CTRS) terminal located at the Defense Science and Technology Organization (DSTO) and a 48 cm communication-on-the-move (COTM) terminal located at BAE Systems Australia, using a ViaSat LinkWayS2™ MF-TDMA...
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RT Logic Awarded Multiple Contracts

Integral Systems Inc. announced that its wholly-owned subsidiary, RT Logic , has been awarded more than $21 M in multiple government, military and commercial contracts over the past three months, $11.4 M of which was closed in the fourth quarter of Fiscal Year 2010. Under the terms of the...
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RFMD Expands Family of GaN Power Transistors

RF Micro Devices Inc. (RFMD) announced that RFMD® has production released the RF3932, a 75 W, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140...
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