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ARTICLES

TriQuint introduces 27-31 GHz 5 W GaN PA

RFIC

TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.


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TriQuint Achieves Breakthrough GaN-on-Diamond Results

Enables high performance, low heat operation, significantly smaller transistors
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
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TriQuint High-speed DSA provides high performance for BTS & test applications

TriQuint Semiconductor Inc. has released a new 7-bit digital step attenuator (DSA) that delivers the low insertion loss, high speed, linearity and and advanced, fine-grain resolution required by designers of base station transceivers, test equipment and many other similar applications. The TQP4M9083 provides up to 31.75 dB of attenuation in 0.25-dB steps and operates from 400 MHz to 3.5 GHz.


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TriQuint wins new $12.3M GaN DARPA contract contract

TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.


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