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ARTICLES

TriQuint achieves GaN defense production milestones

RFIC
July 17, 2014

 TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, announced that it has reached a defense production milestone, successfully completing the Defense Production Act Title III Gallium Nitride on Silicon Carbide Production Capacity program. 


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TriQuint’s high performance GaN solutions take center stage at IMS 2014

June 5, 2014

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, is showcasing its new, high performance technologies at the IEEE International Microwave Symposium / Microwave Theory and Techniques exhibition June 3-5, 2014 in Tampa, Florida.


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TriQuint appoints new distributor in China for its mobile RF solutions

May 22, 2014

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced the appointment of Upstar Technology as its new distributor in China for TriQuint high-performance mobile products.


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TriQuint moves 4G forward in greater China with six major chipset providers

May 13, 2014

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, announced that its advanced filtering solutions and multi-band, multi-mode PA modules (MMPAs) for LTE smartphones have captured nearly 20 reference design wins with all six major chipset providers in greater China.


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TriQuint introduces 27-31 GHz 5 W GaN PA

RFIC
January 24, 2014

TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.


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TriQuint Achieves Breakthrough GaN-on-Diamond Results

Enables high performance, low heat operation, significantly smaller transistors
April 30, 2013
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
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TriQuint’S new GaN transistors deliver superior gain, can reduce amplifier size 50%

October 29, 2012

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.


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TriQuint releases 1st return path DOCSIS amplifier for channel bonding in HFC networks

MMICs&More
October 12, 2012

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.


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TriQuint High-speed DSA provides high performance for BTS & test applications

June 22, 2012

TriQuint Semiconductor Inc. has released a new 7-bit digital step attenuator (DSA) that delivers the low insertion loss, high speed, linearity and and advanced, fine-grain resolution required by designers of base station transceivers, test equipment and many other similar applications. The TQP4M9083 provides up to 31.75 dB of attenuation in 0.25-dB steps and operates from 400 MHz to 3.5 GHz.


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TriQuint wins new $12.3M GaN DARPA contract contract

May 2, 2012

TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.


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