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TriQuint introduces 27-31 GHz 5 W GaN PA

January 24, 2014

TriQuint's TGA2594 is a Ka-Band power amplifier fabricated on TriQuint's 0.15um GaN on SiC process. Operating between 27 and 31 GHz, it achieves 5 W saturated output power with an efficiency of 28% PAE, and 23 dB small signal gain. Along with excellent linear characteristics, the TGA2594 is ideally suited to support both commercial and defense related satellite communications.

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TriQuint Achieves Breakthrough GaN-on-Diamond Results

Enables high performance, low heat operation, significantly smaller transistors
April 30, 2013
TriQuint Semiconductor Inc. announced that it has produced the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafersthat substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint’s breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today’s GaN solutions.
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TriQuint’S new GaN transistors deliver superior gain, can reduce amplifier size 50%

October 29, 2012

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.

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TriQuint releases 1st return path DOCSIS amplifier for channel bonding in HFC networks

October 12, 2012

TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.

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TriQuint High-speed DSA provides high performance for BTS & test applications

June 22, 2012

TriQuint Semiconductor Inc. has released a new 7-bit digital step attenuator (DSA) that delivers the low insertion loss, high speed, linearity and and advanced, fine-grain resolution required by designers of base station transceivers, test equipment and many other similar applications. The TQP4M9083 provides up to 31.75 dB of attenuation in 0.25-dB steps and operates from 400 MHz to 3.5 GHz.

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TriQuint wins new $12.3M GaN DARPA contract contract

May 2, 2012

TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.

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TriQuint's new cost-effective CATV products simplify RF connectivity

March 23, 2012

TriQuint Semiconductor Inc. has announced the availability of two new innovative TriAccess™ amplifiers that can replace multiple products in CATV systems. Both products were released simultaneously at the China Content Broadcasting Network (CCBN) broadband exposition in Beijing and in Silicon Valley, USA.

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TriQuint foundry supports Sarda Technologies

February 3, 2012
TriQuint Semiconductor Inc., a RF solutions supplier and technology innovator, announced that its Foundry Services division is supporting start-up Sarda Technologies to bring a new line of high-efficiency DC-DC converter switches to the global marketplace.
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TriQuint recognized in China

January 27, 2012
TriQuint Semiconductor Inc., a RF solutions supplier and technology innovator, announced it has received several industry awards and recognition from key customers in China during 2011.
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TriQuint Spotlighting K-band Amplifier

May 23, 2011
TriQuint Semiconductor (Booth 2218) will highlight its new K-band power amplifier at IMS 2011. Operating from 21.2 to 23.6 GHz, TriQuint’s TGA4533-SM offers a packaged, 1W P1dB, K-Band power amplifier with 22dB small signal gain. The high OIP3 of 41dBm from this pHEMT device supports applications in PtP radio...
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