- Buyers Guide
TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.
TriQuint Semiconductor Inc. has introduced three new devices for CATV infrastructure and fiber to the premises (FTTP) applications, including the industry’s first amplifier supporting return path DOCSIS® 3.0 channel bonding with 5 to 300 MHz bandwidth.
TriQuint Semiconductor Inc. has released a new 7-bit digital step attenuator (DSA) that delivers the low insertion loss, high speed, linearity and and advanced, fine-grain resolution required by designers of base station transceivers, test equipment and many other similar applications. The TQP4M9083 provides up to 31.75 dB of attenuation in 0.25-dB steps and operates from 400 MHz to 3.5 GHz.
TriQuint Semiconductor Inc. announced that it has been selected by the Defense Advanced Research Projects Agency (DARPA) to lead a $12.3 million development program focused on ultra-fast gallium nitride (GaN) switch technology for the Microscale Power Conversion (MPC) program. TriQuint’s revolutionary new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.
TriQuint Semiconductor Inc. has announced the availability of two new innovative TriAccess™ amplifiers that can replace multiple products in CATV systems. Both products were released simultaneously at the China Content Broadcasting Network (CCBN) broadband exposition in Beijing and in Silicon Valley, USA.
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