ARTICLES

RFHIC

Maximizing Radar Performance with GaN Solid State

This white paper presents RFHIC’s state-of-the-art GaN solid-state amplifiers, optimized for L-band, S-band, C-band, and X-band frequencies. Designed to enhance radar performance, these GaN based amplifiers offer superior power, efficiency, and reliability, making them ideal for advanced radar systems in demanding environments.


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OptiGaN Transistor Series

For 4G, 4G LTE, and Open RAN applications.

Designed as efficient, internally matched, asymmetrical GaN high-electron-mobility transistors (HEMT), the OptiGaN transistors are an ideal choice for users seeking to explore the advanced capabilities of GaN-on-SiC technology for their 4G, 4G LTE, and Open RAN systems.


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