Designed as efficient, internally matched, asymmetrical GaN high-electron-mobility transistors (HEMT), the OptiGaN transistors are an ideal choice for users seeking to explore the advanced capabilities of GaN-on-SiC technology for their 4G, 4G LTE, and Open RAN systems without stretching their budget.

Applications include macro cell base stations, multi carrier applications, distributed antenna systems, remote radio heads, and point-to-(multi)point links.
Discover your ideal wireless infrastructure solution with RFHIC's OptiGaN transistors, where affordability meets high-quality performance.

Unlike other transistor technologies, GaN provides the following unique advantages that make it an ideal candidate for designing RF power amplifiers for 4G, 4G LTE and Open RAN applications:

  • Excellent Thermal Stability
  • High Power-Added Efficiency
  • High Linearity
  • Compact Design

Built with RFHIC's GaN-on-SiC technology, the OptiGaN transistors are a perfect fit for customers seeking high performance at a budget-conscious price for their 4G, 4G LTE, and  Open RAN needs.