Articles Tagged with ''cmos''

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Agilent Technologies Inc. announced that its electronic test equipment will be used by NXP Semiconductors N.V. in a demonstration of its beam-forming technology for the next generation of communication and radar products at the International Consumer Electronics Show in Las Vegas, Jan. 10-13.

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd. has selected Javelin’s JAV5501 Band I PA for new Galaxy smartphones.

Amalfi® Semiconductor Inc., an emerging leader in cost effective, high performance power amplifier solutions for cellular handsets, today announced that its AM7808 CMOS high-power, highefficiency transmit module has been selected by Samsung Electronics Co. Ltd. for multiple high-volume 2G handset platforms targeting emerging markets.

M/A-COM Tech announced a new Transmit/Receive module Driver IC that provides 6-Bit serial/parallel logic control and T/R switch control for multifunction T/R modules. 

Peregrine Semiconductor Corp. (Peregrine) announced from booth # 2009 at the International Microwave Symposium (IMS2012) in Montreal, the SP3T PE42430 RF switch. Developed on Peregrine’s patented UltraCMOS® technology, the PE42430 switch combines low insertion loss with high linearity, high isolation, and small package size, making it well suited for WLAN and Bluetooth® applications in the 2.4 GHz band, as well as general broadband switching applications.

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G PA, announced that Samsung Electronics Co. Ltd. is shipping Javelin’s PA in the new Galaxy Appeal for AT&T.

M/A-COM Technology Solutions Inc. introduced a new high voltage CMOS driver for PIN diodes for use in military and commercial radio applications. The MADR-010574 is designed to work with M/A-COM Tech’s high power and high voltage PIN diodes.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new RF switch from Peregrine Semiconductor Corp. The PE42430 switch was developed on Peregrine's patented UltraCMOS® technology and combines low insertion loss with high linearity, high isolation, and small package size, making it well suited for WLAN and Bluetooth® applications in the 2.4 GHz band, as well as general broadband switching applications.

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd., has selected Javelin’s PA for the new Galaxy S Duos with dual SIM functionality. The Galaxy S Duos is a stylish Android-based smartphone that features a 4-inch touchscreen, 1 GHz processor, 5 megapixel camera, Bluetooth, GPS and Wi-Fi.

Tahoe RF Semiconductor announces that it has licensed the latest GNSS (Global Navigation Satellite System) technology from Stanford University for the development of their next generation low-power, low-cost universal GNSS IC. The technology employs unique RF subsampling techniques that enable the receiver to support all the GNSS bands and be implemented on a single RF CMOS IC Technology