Linear Technology Corp. introduces the LT4321, an ideal diode bridge controller that replaces two diode bridge rectifiers with low-loss N-channel MOSFET bridges to increase the available power and reduce heat dissipation in a Power over Ethernet Powered Device (PoE PD). IEEE 802.3 PoE specifications require PDs to accept DC supply voltages of any polarity over their Ethernet inputs.
Skyworks introduces a low noise amplifier with high linearity and excellent return loss, while drawing as low as 5 mA of bias current. The internal active bias circuitry of the SKY67015-396LF LNA provides stable performance over temperature and process variation.
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new MMIC power amplifier for high power broadband applications.
Custom MMIC announces the addition of the CMD190 to its growing MMIC library of standard products. The CMD190 is a highly efficient GaAs MMIC ultra low noise amplifier for applications from 33 to 45 GHz.
GaN power amplifiers are driving demand for increased power handling from supporting passive components, and Marki Microwave is responding with new high power bias tees and baluns. The new high power surface mount baluns (BALH-0003SMG and BALH-0006SMG) have a 37 dBm 1 dB compression point and improved 5 dB insertion loss (2 dB excess).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a family of new directional power detectors from M/A-COM Technology Solutions Inc. (M/A-COM), featuring integrated low loss directional couplers and built-in temperature compensation circuits.
RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.