Nitronex, a producer of GaN-on-silicon RF power devices, has developed a product reliability calculator to help customers determine the operating life and peak junction temperature of its gallium nitride RF power transistors. Nitronex’s reliability calculator features pre-programmed device parameters that quickly and easily provide accurate product performance and MTTF data to aid their customers’ design processes.

Nitronex is the only GaN RF power device manufacturer to openly provide customers with full qualification reports on all of its RF power transistors.

“Our reliability calculator was designed to accompany our easily accessible qualification documents, product data sheets, application notes, models and technical papers in an effort to support our customers’ design processes and to meet their quality expectations,” said Kevin Linthicum, Nitronex CTO.

Nitronex’s rugged and reliable components provide significant performance advantages in the area of high power and high frequency for RF applications up to 6 GHz. GaN RF power amplifiers feature high thermal conductivity, high breakdown voltage and superior robustness to output mismatches. Nitronex combines the high performance GaN technology with the low-cost and ease of use of silicon substrates to achieve new levels of affordability for high-voltage RF power.