advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News / Amplifiers

TriQuint Semiconductor Introduces New Foundry Process

December 3, 2007
/ Print / Reprints /
| Share More
/ Text Size+

TriQuint Semiconductor Inc., a GaAs foundry supplier, introduced TQBiHEMT, its latest foundry process for wireless/RF design engineers. This new manufacturing capability combines two of TriQuint’s previous processes, offering designers one technology to integrate previously incompatible functional blocks onto a single die, reducing part count, saving board space and improving overall system costs.


TQBiHEMT is well suited for highly integrated front-end radio modules typically found in wireless applications with high data rates and frequencies. These types of applications require a semiconductor process that allows front-end functional blocks to be optimized individually. TQBiHEMT enables the optimal integration of high power amplifiers in HBT on the same die as PHEMT low noise amplifiers and PHEMT switches, while remaining a cost-effective design solution.

“GaAs is a key technology for infrastructure markets requiring high frequency and/or high power performance. TriQuint’s TQBiHEMT process represents an evolutionary step-up from earlier BiFET technologies by offering increased functionality,” notes Asif Anwar, Strategy Analytics. “The GaAs industry is dispelling the myth that integration is an advantage offered by silicon processes alone and continues to increase the value-add to customers.”

“The demand for 3G, 4G wireless and other high frequency wireless applications is growing and our customers look to us to help them tap into this burgeoning market,” said Glen Riley, vice president and general manager for TriQuint Commercial Foundry. “The introduction of the TQBiHEMT process demonstrates TriQuint’s commitment to our customer success through the delivery of innovative technology at a competitive price point relative to discrete solutions.”

TriQuint uses its high volume InGaP HBT process, TQHBT3 -- designed for high power, high efficiency and linear power amplifiers -- in its own handset products used in the world’s most popular mobile phones. Likewise, TriQuint’s InGaAs E/D PHEMT process, TQPED, is utilized to make high isolation switches and low noise amplifiers for the handset and wireless data markets. The TQBiHEMT process, an innovative combination of these two processes, enables the creation of single chip products, incorporating the best possible power amplifiers and switch low noise amplifier components.

Mike Peters, director of marketing for TriQuint’s Commercial Foundry, noted, “TQBiHEMT provides wireless communications system designers the circuit component and three-layer interconnect technology required to optimize performance goals for next generation RFICs. Together with our proven manufacturing capabilities, reputation for quality and reliability and excellent design tools, engineers can be confident the new TQBiHEMT process will help them successfully create highly integrated wireless front-ends.”

Recent Articles by Microwave Journal

Post a comment to this article

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement