EL SEGUNDO, Calif. and PARIS, France — June 30, 2008 — AWR® and United Monolithic Semiconductors (UMS) today introduced an advanced process design kit (PDK) for the UMS PPH25X GaAs pseudomorphic high electron mobility transistor (pHEMT) foundry process. The UMS PPH25X process is dedicated to the design of microwave monolithic integrated circuits (MMIC) at frequencies up to 35 GHz. The PDK lets users take advantage of the industry-leading fabrication capabilities of UMS together with AWR's innovative Microwave Office® design suite.
The PPH25X process is specifically developed for high-frequency (45 GHz Ft) and high-power designs and is fully qualified by UMS. The process features very high breakdown voltage that achieves power density up to 1 W per millimeter of gate periphery (load-pull power measurements exhibit 5 dB power gain at 30 GHz for a large 8 x 75 µm periphery). Small via-hole definitions through the 70 µm substrate can be connected directly to the sources of the transistors, reducing parasitics and simplifying wideband amplifier design.
AWR's Microwave Office design environment is ideally suited for MMIC development. The software integrates in one seamless environment all the tools essential for high-frequency design: linear and non-linear circuit simulators, electromagnetic (EM) analysis tools, integrated schematic and layout, statistical design capabilities, and parametric cell libraries with built-in design-rule check (DRC). The design suite further provides innovative technologies, a complete front to back flow, and the ability to integrate third-party tools, delivering an intuitive, open, and interoperable environment to MMIC designers.
Pricing and Availability
The PPH25X PDK is available now. Readers should contact their local UMS representative for more information.
