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Military Microwaves Supplement
RFMW Ltd. announces design and sales support forThe IXRFD630 from IXYS RF. This high speed, high-current CMOS gate driver is specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
The IXYS IXRFD630 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The driver input is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. Low quiescent current and a wide operating voltage range make the IXRFD630 unmatched in performance and value.
The surface mount IXRFD630 is packaged in a low inductance RF package to minimize stray lead inductances for optimum switching performance in applications such as pulse generators, pulse laser diode drivers and switch mode supplies.
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